E-fuse structure of semiconductor device

ABSTRACT

Provided is an e-fuse structure of a semiconductor device having improved fusing performance so as to enable a program operation at a low voltage. The e-fuse structure includes a first metal pattern formed at a first vertical level, the first metal pattern including a first part extending in a first direction and a second part extending in the first direction and positioned to be adjacent to the first part, and a third part adjacent to the second part, the second part being positioned between the first part and the third part, the first part and the second part being electrically connected to each other, and the third part being electrically disconnected from the second part; and a second metal pattern electrically connected to the first metal pattern and formed at a second vertical level different from the first vertical level.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of and claims priority toU.S. patent application Ser. No. 14/559,846, filed Dec. 3, 2014, whichclaims priority from Korean Patent Application No. 10-2014-0032226 filedon Mar. 19, 2014 in the Korean Intellectual Property Office, and all thebenefits accruing therefrom under 35 U.S.C. 119, and also claimspriority from U.S. Provisional Patent Application No. 61/930,625, filedJan. 23, 2014, and all the benefits accruing therefrom under 35 U.S.C.119, the contents of each of which in their entirety are hereinincorporated by reference.

BACKGROUND

1. Field of the Invention

The present disclosure relates to an e-fuse structure, and moreparticularly to an e-fuse structure of a semiconductor device.

2. Description of the Related Art

In semiconductor device technologies, fuses are used for a variety ofpurposes. For example, to improve chip yield, fuses of memory devicesare typically used in a repair process in which a bad (defective) memorycell is replaced with a redundancy memory cell. As other examples, fusesmay be used to customize and/or optimize chip characteristics afterfab-out, and fuses may be used to record/identify chip informationand/or fabrication histories.

Fuses may be classified as either laser fuses or e-fuses. Laser fusesare configured to be selectively programmed (that is, opened) byutilization of a laser, and e-fuses are configured to be selectivelyprogrammed by utilization of electric current.

SUMMARY

The present disclosure provides an e-fuse structure of a semiconductordevice having improved fusing performance so as to enable a programoperation at a low voltage.

The above and other objectives of the present disclosure will bedescribed in or be apparent from the following description of thevarious embodiments.

According to one aspect of the present invention a semiconductor deviceincluding an e-fuse structure includes a substrate; a first metalpattern formed at a first vertical level above the substrate; a secondmetal pattern formed at a second vertical level above the substratecloser to the substrate than the first vertical level; and a conductivevia structure physically and electrically connecting the first metalpattern to the second metal pattern. The first metal pattern includes afirst part extending in a first direction, a second part extending inthe first direction and adjacent to the first part, a third partelectrically and physically connecting the first part to the secondpart, and a fourth part extending in the first direction and adjacent tothe second part but not electrically connected to the first, second, orthird parts, and the second part is between the first part and thefourth part.

In one embodiment, the first part, second part, and fourth part are allsubstantially parallel to each other.

In one embodiment, the conductive via structure directly connects thefirst part to the second metal pattern.

In one embodiment, the second part is configured to break before thefirst part. For example, the second part has a smaller width in adirection perpendicular to the first direction than the first part.

In one embodiment, the first metal pattern is connected to a cathode ofthe e-fuse structure, and the second metal pattern is connected to ananode of the e-fuse structure.

In one embodiment, the first part, second part, third part, and fourthpart are all integrally formed at the first level.

According to another aspect of the present invention, there is providedan e-fuse structure of a semiconductor device, comprising a first metalpattern formed at a first vertical level, the first metal patternincluding a first part extending in a first direction and a second partextending in the first direction and positioned to be adjacent to thefirst part, and a third part adjacent to the second part, the secondpart being positioned between the first part and the third part, thefirst part and the second part being electrically connected to eachother, and the third part being electrically disconnected from thesecond part; and a second metal pattern electrically connected to thefirst metal pattern and formed at a second vertical level different fromthe first vertical level.

The first metal pattern may include a fourth part electrically andphysically connecting the first part to the second part.

In one embodiment, the first part, the fourth part and the second partare sequentially connected to one another form a U-shape configuration.

A width of the fourth part between an inside side surface of the U-shapeand an outside side surface of the U-shape may be greater than a widthof the first part between the inside side surface of the U-shape theoutside side surface of the U-shape.

The width of the second part may be a critical dimension L and the widthof the fourth part may be greater than L and smaller than or equal to 2L.

In one embodiment, the first metal pattern includes a fourth partextending in the first direction and having a side surface facing a sidesurface of the second part, and the first part is positioned between thesecond part and the fourth part.

The first metal pattern may include a fifth part connecting the secondpart to the fourth part.

The second part, the fifth part and the fourth part may be sequentiallyconnected to one another form a U-shaped configuration.

In one embodiment, the first part, second part, third part, fourth part,and fifth part form an integrally formed spiral structure.

In one embodiment, the fourth part is not used as a path of currentmigration.

In one embodiment, the e-fuse structure may further comprise a viaconnecting the first metal pattern to the second metal pattern, and thesecond metal pattern includes a fourth part and a fifth part having sidesurfaces facing each other and positioned to be adjacent to each otherand a sixth part connecting one end of the fourth part to one end of thefifth part, and the via directly connects the first part to the fourthpart.

A width of the fourth part may be greater than that of the first partand the width of the first part is greater than that of the second part.

The second metal pattern may further include a seventh part facing thesixth part with the fourth part and the fifth part positioned betweenthe sixth part and the seventh part.

The seventh part may be connected to the other end of the fifth partopposite to one end of the fifth part.

In one embodiment, the second metal pattern further includes an eighthpart connected to the seventh part, and the seventh part and the eighthpart connected to each other are L-shaped.

In one embodiment, the seventh part is not used as a path of currentmigration.

In one embodiment, the first metal pattern includes a first power supplyconnection part connected to the second part and the second metalpattern includes a second power supply connection part connected to thefifth part.

In one embodiment, the fifth part extends in a second directiondifferent from the first direction, the sixth part extends in the firstdirection, and the first power supply connection part and the secondpower supply connection part are positioned at opposite sides of thefirst direction in view of the via.

In one embodiment, the fifth part extends in a second directiondifferent from the first direction, the sixth part extends in the firstdirection, and the third part and the sixth part are positioned at thesame side of the second direction in view of the via.

In one embodiment, the fifth part extends in the first direction and thesixth part extends in a second direction different from the firstdirection.

The third part may extend in the first direction.

In one embodiment, the first metal pattern and the second metal patternare formed on a substrate, the first metal pattern is positioned at afirst height from a top surface of the substrate, the second metalpattern is positioned at a second height from the top surface of thesubstrate, and the first height is greater than the second height.

According to still another aspect of the present invention, there isprovided e-fuse structure of a semiconductor device, comprising a firstmetal pattern formed at a first vertical level and including a U-shapedfirst bent portion and a first auxiliary pattern electricallydisconnected from the first bent portion, the first bent portionincluding a first part and a second part extending in a first directionand positioned to be adjacent to each other with the second partpositioned between the first auxiliary pattern and the first part; afirst via physically and electrically connected to the first part; and asecond metal pattern formed at a second vertical level different fromthe first vertical level and physically and electrically connected tothe first via.

The second metal pattern may include a second bent portion and a powersupply connection part connected to the second bent portion, the secondbent portion includes a fourth part extending in a second directiondifferent from the first direction, a fifth part having a side surfacefacing a side surface of the fourth part and being adjacent to thefourth part, and a sixth part connecting one end of the fourth part toone end of the fifth part and extending in the first direction, and thepower supply connection part connected to the fourth part.

In one embodiment, the first via is connected to the fifth part.

In one embodiment, the second metal pattern further includes a secondauxiliary pattern that is not used as a path of current migration, andthe second auxiliary pattern includes a seventh part extending in thefirst direction and an eighth part extending from one end of the seventhpart and extending in the second direction, and one end of the seventhpart is connected to one end of the fourth part, and the fifth part ispositioned between the seventh part and the sixth part.

In one embodiment, the first metal pattern includes a second auxiliarypattern extending in the first direction with the first part positionedbetween the second auxiliary pattern and the second part.

The second auxiliary pattern may be connected to the second part and isnot used as a path of a program current.

The first auxiliary pattern may extend in the first direction.

The e-fuse structure may further comprise a third metal patternextending in a second direction different from the first direction andformed at a third vertical level between the first vertical level andthe second vertical level; and a second via connecting the third metalpattern to the second metal pattern, and the first via connects thefirst metal pattern to the third metal pattern.

The third metal pattern may include a connection pattern extending inthe first direction and second auxiliary patterns formed at both sidesof the connection pattern to be parallel with the connection pattern,and the first via and the second via are connected to the connectionpattern.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present disclosurewill become more apparent by describing in detail various embodimentsthereof with reference to the attached drawings in which:

FIG. 1 is a schematic view illustrating an effect of electromigration ina program process of an e-fuse structure according to embodiments of thepresent invention;

FIG. 2 is a schematic view illustrating an effect of thermomigration ina program process of an e-fuse structure according to embodiments of thepresent invention;

FIG. 3 is a schematic view illustrating effects of electromigration andthermomigration in a program process of an e-fuse structure according toembodiments of the present invention;

FIGS. 4 to 6 are schematic views illustrating an e-fuse structureaccording to a first embodiment of the present invention;

FIGS. 7 and 8 are schematic views illustrating an e-fuse structureaccording to a second embodiment of the present invention;

FIGS. 9 and 10 are schematic views illustrating an e-fuse structureaccording to a third embodiment of the present invention;

FIG. 11 is a schematic view illustrating an e-fuse structure accordingto a fourth embodiment of the present invention;

FIG. 12 is a schematic view illustrating an e-fuse structure accordingto a fifth embodiment of the present invention;

FIG. 13 is a schematic view illustrating an e-fuse structure accordingto a sixth embodiment of the present invention;

FIGS. 14 to 16 are schematic views illustrating an e-fuse structureaccording to a seventh embodiment of the present invention;

FIGS. 17 and 18 are schematic views illustrating an e-fuse structureaccording to an eighth embodiment of the present invention;

FIGS. 19 and 20 are schematic views illustrating an e-fuse structureaccording to a ninth embodiment of the present invention;

FIGS. 21 and 22 are schematic views illustrating an e-fuse structureaccording to a tenth embodiment of the present invention;

FIGS. 23 and 24 are schematic views illustrating an e-fuse structureaccording to an eleventh embodiment of the present invention;

FIGS. 25 and 26 are schematic views illustrating an e-fuse structureaccording to a twelfth embodiment of the present invention;

FIGS. 27 and 28 are schematic views illustrating an e-fuse structureaccording to a thirteenth embodiment of the present invention;

FIGS. 29 and 30 are schematic views illustrating an e-fuse structureaccording to a fourteenth embodiment of the present invention;

FIG. 31 is a schematic diagram illustrating modified examples of theseventh to fourteenth embodiments of the present invention;

FIG. 32 illustrates that a void is created when a program current issupplied to e-fuse structures according to embodiments of the presentinvention;

FIG. 33 is a schematic block diagram illustrating an exemplary memorysystem including semiconductor devices according to embodiments of thepresent invention;

FIG. 34 is a schematic block diagram illustrating an exemplary memorycard including semiconductor devices according to embodiments of thepresent invention; and

FIG. 35 is a schematic block diagram illustrating an exemplaryinformation processing system in which semiconductor devices accordingto embodiments of the present invention are mounted.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The present disclosure will now be described more fully hereinafter withreference to the accompanying drawings, in which various embodiments ofthe invention are shown. This invention may, however, be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. The same reference numbers indicate thesame or similar components throughout the specification. In the attachedfigures, the thickness of layers and regions is exaggerated for clarity.

It will be understood that when an element or layer is referred to asbeing “connected to,” or “coupled to” another element or layer, it canbe directly connected to or coupled to another element or layer orintervening elements or layers may be present. In contrast, when anelement is referred to as being “directly connected to” or “directlycoupled to” another element or layer, or “contacting” another element orlayer, there are no intervening elements or layers present.

It will also be understood that when a layer is referred to as being“on” another layer or substrate, it can be directly on the other layeror substrate, or intervening layers may also be present. In contrast,when an element is referred to as being “directly on” another element,there are no intervening elements present.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. Unless the context indicates otherwise, theseterms are only used to distinguish one element from another element, forexample as a naming convention. Thus, for example, a first element, afirst component or a first section discussed below could be termed asecond element, a second component or a second section without departingfrom the teachings of the present invention.

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items. The use of the terms “a” and“an” and “the” and similar referents in the context of describing theinvention (especially in the context of the following claims) are to beconstrued to cover both the singular and the plural, unless otherwiseindicated herein or clearly contradicted by context. The terms“comprising,” “having,” “including,” and “containing” are to beconstrued as open-ended terms (i.e., meaning “including, but not limitedto,”) unless otherwise noted.

Embodiments described herein will be described referring to plan viewsand/or cross-sectional views by way of ideal schematic views.Accordingly, the exemplary views may be modified depending onmanufacturing technologies and/or tolerances. Therefore, the disclosedembodiments are not limited to those shown in the views, but includemodifications in configuration formed on the basis of manufacturingprocesses. Therefore, regions exemplified in figures may have schematicproperties, and shapes of regions shown in figures may exemplifyspecific shapes of regions of elements to which aspects of the inventionare not limited.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element's or feature's relationship to another element(s)or feature(s) as illustrated in the figures. It will be understood thatthe spatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term “below” can encompass both an orientation ofabove and below. The device may be otherwise oriented (rotated 90degrees or at other orientations) and the spatially relative descriptorsused herein interpreted accordingly.

Terms such as “same,” “planar,” “coplanar,” or “parallel” as used hereinwhen referring to orientation, layout, location, shapes, sizes, amounts,or other measures do not necessarily mean an exactly identical, planar,coplanar, or parallel orientation, layout, location, shape, size,amount, or other measure, but are intended to encompass nearlyidentical, planar, coplanar, or parallel orientation, layout, location,shapes, sizes, amounts, or other measures within acceptable variationsthat may occur, for example, due to manufacturing processes. The term“substantially” may be used herein to reflect this meaning.

Unless defined otherwise, all technical and scientific terms used hereinhave the same meaning as commonly understood by one of ordinary skill inthe art to which this disclosure belongs. It is noted that the use ofany and all examples, or exemplary terms provided herein is intendedmerely to better illuminate the invention and is not a limitation on thescope of the invention unless otherwise specified. Further, unlessdefined otherwise, all terms defined in generally used dictionaries maynot be overly interpreted.

First, a thermally-assisted electromigration mode used in a programprocess of e-fuse structures according to embodiments of the presentinvention will be described with reference to FIGS. 1 to 3.

FIG. 1 is a schematic view illustrating an effect of electromigration ina program process of e-fuses according to embodiments of the presentinvention, FIG. 2 is a schematic view illustrating an effect ofthermomigration in a program process of e-fuses according to embodimentsof the present invention, and FIG. 3 is a schematic view illustratingeffects of electromigration and thermomigration in a program process ofe-fuses according to embodiments of the present invention. Morespecifically, in FIG. 3, the curve I represents a driving force derivedfrom electromigration in a fuse link when the e-fuse structure isprogrammed, the curve II represents a driving force derived fromthermomigration, as expressed by a differential of a temperaturedistribution in a fuse link when the e-fuse structure is programmed, andthe curve III represents a total driving force derived from acombination of thermomigration and electromigration.

The e-fuse structure according to certain embodiments of the presentinvention is a stacked e-fuse structure, and a fuse link F of the e-fusestructure also has a stacked structure. However, for the sake ofconvenient explanation, linear fuse links as the fuse link F areillustrated in FIGS. 1 to 3.

Programming of the e-fuse structure includes supplying a program currentto the fuse link F by applying a predetermined voltage between a cathodeC and an anode A. In order to program the e-fuse structure, a negativevoltage may be applied to the cathode C and a positive voltage may beapplied to the anode A. Accordingly, electrons may flow from the cathodeC to the anode A in the fuse link F. When the electrons migrate in thefuse link F, the electrons may collide with atoms constituting the fuselink F, leading to spatial migration of atoms, called anelectromigration (EM) phenomenon.

In FIG. 1, the driving force derived from electromigration in the fuselink F (that is, an electronic driving force F_(EM)) is uniformlysupplied to the entire area of the fuse link F, irrespective of theposition of the fuse link F, which is, however, provided only for thesake of convenient explanation. Aspects of the present invention are notlimited to this uniform supplying of a driving force. For example, thedriving force derived from electromigration in the fuse link F may varyin the fuse link F by being changed into a sectional area of the fuselink F.

In addition, the fuse link F may be made of a metallic material, such astungsten, aluminum or copper. If a program current is supplied to thefuse link F, Joule's heat may be generated in the fuse link F by theprogram current. The Joule's heat generated by the program current mayform an uneven temperature distribution in the fuse link F, as shown inFIG. 2. The fuse link F showing the uneven temperature distribution mayhave the maximum temperature at its central part. The uneven temperaturedistribution may cause thermomigration phenomena TM1 and TM2 of atoms inthe fuse link F. The thermomigration phenomena may include firstthermomigration TM1 causing atoms to migrate from the center of the fuselink F to the anode A and second thermomigration TM2 causing atoms tomigrate from the center of the fuse link F to the cathode C.

Referring to FIG. 3, the driving force derived from electromigration inthe fuse link F (that is, the electronic driving force F_(EM)) may besupplied to the entire area of the fuse link F, irrespective of theposition in the fuse link F. Since the fuse link F has an uneventemperature distribution, the driving force derived from thermomigration(that is, the thermal driving force F_(TM)) may be applied to oppositesides of the central part of the fuse link F.

Between the anode A and the central part of the fuse link F, a migrationdirection of atoms by the electromigration EM and a migration directionof atoms by the first thermomigration TM1 are the same as each other.Therefore, the electronic driving force and the thermal driving forcemay be combined with each other to increase a total driving forceF_(EM+TM) applied to the fuse link F.

Meanwhile, between the cathode C and the central part of the fuse linkF, a migration direction of atoms by the electromigration EM and amigration direction of atoms by the first thermomigration TM1 areopposite to each other. Therefore, the electronic driving force and thethermal driving force may be combined with each other to decrease atotal driving force F_(EM+TM) applied to the fuse link F.

In certain embodiments, as shown in FIG. 3, the thermal driving forceand electronic driving force are combined due to the uneven temperaturedistribution of the fuse link F, resulting in flux divergence, that is,non-uniform atomic flow rates. Atoms may be depleted or accumulated inregions where the flux divergence occurs. More specifically, in anarbitrary region of the fuse link F, if an out-flowing flux of atoms isgreater than an in-flowing flux of atoms, the atoms may be depleted,thereby creating a void. Conversely, in an arbitrary region of the fuselink F, if an in-flowing flux of atoms is greater than an out-flowingflux of atoms, the atoms may be accumulated, thereby generatinghill-locks. The creation of the void due to the flux divergence mayincrease resistance of the fuse link F and the e-fuse structure may beprogrammed by the increased resistance of the fuse link F.

As described above, when the e-fuse structure is programmed, the largerthe flux divergence is supplied to the fuse link F, the faster the voidis created due to depletion of atoms.

Accordingly, the e-fuse structure capable of providing a large fluxdivergence can be provided by adjusting the total driving force appliedto the fuse link F. In addition, in designing the e-fuse structure, anarea for providing a large flux divergence is produced in the fuse linkF, thereby providing the e-fuse structure capable of adjusting voidgenerating locations due to the depletion of atoms.

Next, an e-fuse structure according to a first embodiment of the presentinvention will be described with reference to FIGS. 4 to 6.

FIGS. 4 to 6 are schematic views illustrating an e-fuse structureaccording to a first embodiment of the present invention. Specifically,FIG. 4 is a plan view of an e-fuse structure according to a firstembodiment of the present invention, FIG. 5 is a perspective view of thee-fuse structure shown in FIG. 4, and FIG. 6 is a cross-sectional viewtaken along the line A-A of FIG. 4. For brevity, an interlayerinsulation layer 110 is not illustrated in FIGS. 4 and 5.

Referring to FIGS. 4 to 6, the e-fuse structure 1 according to the firstembodiment of the present invention may include a first metal pattern200, a first via 410 and a second metal pattern 300.

The first metal pattern 200 is formed at a first metal level and thesecond metal pattern 300 is formed at a second metal level differentfrom the first metal level. Therefore, the e-fuse structure 1 accordingto one embodiment of the present invention has a stacked metalstructure.

In the e-fuse structure according to certain embodiments of the presentinvention, the first metal level may be higher than the second metallevel. The first metal pattern 200 and the second metal pattern 300 areformed on a substrate 102. For example, the first metal pattern 200 andthe second metal pattern 300 are formed on the substrate 102 havingcircuit patterns 105.

In more detail, the first metal pattern 200 and the second metal pattern300 may be formed on a pre metal dielectric (PMD) 100 covering thesubstrate 102 having the circuit patterns 105. The first metal pattern200 and the second metal pattern 300 may be formed in an interlayerinsulation layer 110 formed on the PMD 100. Thus, the e-fuse structureaccording to one embodiment of the present invention may be formedthrough a back end of line (BEOL) process.

When the first metal pattern 200 is positioned at the first height fromthe top surface of the substrate 102 and the second metal pattern 300 ispositioned at the second height from the top surface of the substrate102, the first height is greater than the second height. In other words,a height ranging from the top surface of the substrate 102 to the firstmetal level at which the first metal pattern 200 is formed is greaterthan a height ranging from the top surface of the substrate 102 to thesecond metal level at which the second metal pattern 300 is formed.

The substrate 102 may be, for example, a bulk silicon wafer or asilicon-on-insulator (SOI). Alternatively, the substrate 102 may be asilicon substrate or may include a material other than silicon. Forexample, the substrate 102 may include at least one of germanium,silicon germanium, indium antimonide, a lead telluride compound, indiumarsenic, indium phosphide, gallium arsenic, gallium antimonide, or othersuitable substrate materials, but is not limited thereto.

The circuit patterns 105 may constitute circuit devices. The circuitdevices may include a plurality of memory devices. The memory devicesmay include, for example, volatile semiconductor memory devices andnon-volatile semiconductor memory devices. Examples of the volatilesemiconductor memory devices may include DRAM, SRAM, and so on. Examplesof the non-volatile semiconductor memory devices may include EPROM,EEPROM, Flash EEPROM, and so on.

As used herein, a semiconductor device may refer, for example, to adevice such as a semiconductor chip (e.g., memory chip and/or logic chipformed on a die), a stack of semiconductor chips, a semiconductorpackage including one or more semiconductor chips stacked on a packagesubstrate, or a package-on-package device including a plurality ofpackages. These devices may be formed using ball grid arrays, wirebonding, through substrate vias, or other electrical connectionelements, and may include memory devices such as volatile ornon-volatile memory devices.

An electronic device, as used herein, may refer to these semiconductordevices, but may additionally include products that include thesedevices, such as a memory module, a hard drive including additionalcomponents, or a mobile phone, laptop, tablet, desktop, camera, or otherconsumer electronic device, etc.

The PMD 100 may include, for example, at least one of a low-k material,an oxide layer, a nitride layer and an oxynitride layer. Examples of thelow-k material may include flowable oxide (FOX), Tonen silazene (TOSZ),undoped silicate glass (USG), borosilica glass (BSG), phosphosilacaglass (PSG), borophosphor silica glass (BPSG), plasma enhancedtetraethyl orthosilicate (PETEOS), fluoride silicate glass (FSG), highdensity plasma (HDP) oxide, plasma enhanced oxide (PEOX), flowable CVD(FCVD), or combinations thereof, but are not limited thereto.

The interlayer insulation layer 110 may include, for example, at leastone of a low-k material, an oxide layer, a nitride layer and anoxynitride layer.

In the e-fuse structure according to certain embodiments of the presentinvention, a positive voltage is applied to the first metal pattern 200and a negative voltage is applied to the second metal pattern 300. Whena program current is supplied to the e-fuse structure, the current flowsfrom the first metal pattern 200 to the second metal pattern 300. Thus,electrons migrate from the second metal pattern 300 to the first metalpattern 200.

Referring to FIGS. 1 to 3, the first metal pattern 200 is connected tothe anode A and the second metal pattern 300 is connected to the cathodeC.

Referring to FIGS. 4 to 6, the first metal pattern 200 may include afirst bent portion 210 and a first auxiliary pattern 220.

The first bent portion 210 may extend in a first direction X and mayinclude a first part 212 and a second part 214 nearest to each other.The first part 212 of the first bent portion and the second part 214 ofthe first bent portion may be formed to be parallel to each other in thefirst direction X. The term “nearest” used herein may mean that there isno intervening metal pattern between one surface of the first part 212of the first bent portion and one surface of the second part 214 of thefirst bent portion, which face each other. Thus, in one embodiment, onlythe interlayer insulation layer 110 exists between the one surface(e.g., side surface) of the first part 212 of the first bent portion andthe one surface (e.g., side surface) of the second part 214 of the firstbent portion, facing each other. The first part 212 of the first bentportion and the second part 214 of the first bent portion areelectrically connected to each other.

The first bent portion 210 includes a third part 216 connecting thefirst part 212 of the first bent portion to the second part 214 of thefirst bent portion. The third part 216 of the first bent portion mayextend in a second direction Y.

The third part 216 of the first bent portion connecting one end of thefirst part 212 of the first bent portion to one end of the second part214 of the first bent portion is illustrated in FIGS. 4 and 5, butaspects of the present invention are not limited thereto. For example,though FIGS. 4 and 5 depict the parts of the first bent portion 210having straight edges and right angles with respect to each other, theparts may be combined in a more continuous curve structure, for exampleto have a bent “U” shape rather than the depicted angled “

” shape.

In the following description of the e-fuse structure according to theembodiments of the present invention, it is assumed that the first part212 of the first bent portion, the third part 216 of the first bentportion, and the second part 214 of the first bent portion, sequentiallyconnected to one another, may form a “U”-shaped configuration. Thus, thefollowing description will be made with regard to a case where the firstbent portion 210 is “U”-shaped (whether curved or angled).

A width of the first part 212 of the first bent portion may be a firstwidth W4, a width of the second part 214 of the first bent portion maybe a second width W1, and a width of the third part 216 of the firstbent portion may be a third width W2. The width W4 of the first part 212of the first bent portion and the width W1 of the second part 214 of thefirst bent portion may mean widths in the second direction Y along therespective first and second parts 212 and 214, and the width W2 of thethird part 216 of the first bent portion may mean a width in the firstdirection X along the third part 216. Each width described above may bea width of the associated part of the bent portion between an outer sidesurface (e.g. outside of the U-shape) and an inner side surface (e.g.,inside of the U-shape).

In the e-fuse structures according to certain embodiments of the presentinvention, the width W4 of the first part 212 of the first bent portionis greater than the width W1 of the second part 214 of the first bentportion. In addition, in the e-fuse structure according to certainembodiments of the present invention, the width W2 of the third part 216of the first bent portion is greater than the width W1 of the secondpart 214 of the first bent portion. Thus, in the first bent portion 210,the width W1 of the second part 214 of the first bent portion may havethe smallest value.

Let the width W1 of the second part 214 of the first bent portion be L.In one embodiment, the width W2 of the third part 216 of the first bentportion may be greater than L and smaller than or equal to 2 L. Incertain embodiments, the width W4 of the first part 212 of the firstbent portion may be greater than L and smaller than 1.5 L. Furthermore,the space between the first part 212 of the first bent portion and thesecond part 214 of the first bent portion may be smaller than L. Also,the width of the auxiliary pattern 220 may be greater than or equal to Land smaller than 1.5 L, and the space between the second part 214 of thefirst bent portion and the auxiliary pattern 220 may be smaller than L.

In order to program the e-fuse structure according to certainembodiments of the present invention at a relatively low voltage, acurrent density may be increased by reducing a sectional area of thesecond part 214 of the first bent portion. One way to accomplish this isby reducing the width W1 of the second part 214 of the first bentportion. The width W1 of the second part 214 of the first bent portionmay have a critical dimension. For example, the second part 214 of thefirst bent portion may have a minimum line width that can be formedusing photolithography.

In the e-fuse structure according to certain embodiments of the presentinvention, the second part 214 of the first bent portion may be aportion where a void is created when a program current is supplied,which will later be described with reference to FIG. 32.

In addition, since the first metal pattern 200 includes the first bentportion 210, a relatively large amount of Joule's heat may be generatedin the first bent portion 210. Further, since the first metal pattern200 includes the first bent portion 210, heat integration in the e-fusestructure can be enhanced.

The first auxiliary pattern 220 may extend in the first direction X. Thefirst auxiliary pattern 220 may be formed to be near to the first bentportion 210, for example, near the second part 214 of the first bentportion. In one embodiment, the first auxiliary pattern 220 faces thefirst part 212 of the first bent portion 210 with the second part 214 ofthe first bent portion positioned between the first auxiliary pattern220 and the first part 212 of the first bent portion (e.g., a sidesurface of the first auxiliary pattern 220 may face an opposite sidesurface of the first part 212 of the first bent portion 210). As aresult, the second part 214 of the first bent portion is positionedbetween the first auxiliary pattern 220 and the first part 212 of thefirst bent portion.

The first auxiliary pattern 220 is shown as extending in the firstdirection X and formed to be parallel with the second part 214 of thefirst bent portion in FIGS. 4 and 5, but aspects of the presentinvention are not limited thereto.

Nonetheless, in the e-fuse structure according to certain embodiments ofthe present invention, the first auxiliary pattern 220, the second part214 of the first bent portion and the first part 212 of the first bentportion extend in the first direction X and may be sequentially formedwith respect to one another to be adjacent to each other. For example,with regard to metal patterns, the first auxiliary pattern 220 may beimmediately adjacent to the second part 214 of the first bent portion,and the second part 214 of the first bent portion may be immediatelyadjacent to the first part 212 of the first bent portion.

The first auxiliary pattern 220 is separated from the first bent portion210 to be electrically disconnected from the first bent portion 210.Therefore, when a program current is supplied to the e-fuse structure,the first auxiliary pattern 220 is not used as a path for the flow ofcurrent.

In the e-fuse structure according to certain embodiments of the presentinvention, the first auxiliary pattern 220 performs the followingfunctions.

First, the first auxiliary pattern 220 and the first part 212 of thefirst bent portion may reduce the width W1 of the second part 214 of thefirst bent portion. For example, because the first auxiliary pattern 220and the first part 212 of the first bent portion are formed at oppositesides of the second part 214 of the first bent portion, the width W1 ofthe second part 214 of the first bent portion is reduced. Morespecifically, the first auxiliary pattern 220 is formed to be parallelwith the second part 214 of the first bent portion in a photolithographyprocess, thereby preventing the width W1 of the second part 214 of thefirst bent portion from being increased.

Next, the first auxiliary pattern 220 serves to prevent propagation ofcracks. In detail, if a program current is supplied to the e-fusestructure, a void may be created in the second part 214 of the firstbent portion. Since the void is created in the second part 214 of thefirst bent portion, a crack may also be generated in the interlayerinsulation layer 110 existing in vicinity of the second part 214 of thefirst bent portion. The first auxiliary pattern 220 prevents the cracksgenerated when the void is created in the second part 214 of the firstbent portion from being further propagated.

In addition, the first auxiliary pattern 220 promotes integration of theheat generated in the e-fuse structure. For example, the first auxiliarypattern 220 may enhance heat integration in the e-fuse structure bypreventing the Joule's heat generated from the first bent portion 210from being rapidly propagated to the vicinity of the e-fuse structure.

The first metal pattern 200 may further include a second auxiliarypattern 230. The second auxiliary pattern 230 may extend in the firstdirection X. The second auxiliary pattern 230 may be formed to beadjacent to the first bent portion 210, more specifically, the firstpart 212 of the first bent portion. The second auxiliary pattern 230faces the second part 214 of the first bent portion (e.g. side surfacesthereof face each other) with the first part 212 of the first bentportion positioned between the second auxiliary pattern 230 and thesecond part 214 of the first bent portion. Thus, the first part 212 ofthe first bent portion is positioned between the second auxiliarypattern 230 and the second part 214 of the first bent portion. Forexample, with regard to metal patterns, the second part 214 of the firstbent portion may be immediately adjacent to the first part 212 of thefirst bent portion, and the first part 212 of the first bent portion maybe immediately adjacent to the second auxiliary pattern 230.

The second auxiliary pattern 230 electrically connected to the firstbent portion 210 is illustrated in FIGS. 4 and 5, but aspects of thepresent invention are not limited thereto. For example, these componentsmay have certain curved features rather than linear and angled features.While the first bent portion 210 and the second auxiliary pattern 230are connected to each other in the illustrated embodiment, the secondauxiliary pattern 230 is not used as a path for the flow of current whena program current is supplied to the e-fuse structure.

In the e-fuse structure according to certain embodiments of the presentinvention, the second auxiliary pattern 230 performs the followingfunctions.

First, the second auxiliary pattern 230 may reduce the width W4 of thefirst part 212 of the first bent portion. For example, because thesecond auxiliary pattern 230 is formed at one side of the first part 212of the first bent portion, the width W4 of the first part 212 of thefirst bent portion may be prevented from being increased.

Next, the second auxiliary pattern 230 prevents a temperature of thefirst bent portion 210 from being lowered due to rapid propagation ofthe Joule's heat generated in the first bent portion 210 to the vicinityof the e-fuse structure, thereby enhancing the heat integration in thee-fuse structure.

The first metal pattern 200 may further include an extension pattern245. The extension pattern 245 may connect the first bent portion 210 tothe second auxiliary pattern 230. The extension pattern 245 may extend,for example, in the second direction Y.

The extension pattern 245 connecting the other end of the second part214 of the first bent portion and one end of the second auxiliarypattern 230 is illustrated in FIGS. 4 and 5, but aspects of the presentinvention are not limited thereto. For example, these components mayhave certain curved features rather than linear and angled features. Afirst end of the second part 214 of the first bent portion may beconnected (e.g., directly connected) to the third part 216 of the firstbent portion (e.g., by being integrally formed together) and a second,opposite end of the second part 214 of the first bent portion may beconnected (e.g., directly connected) to the extension pattern 245 (e.g.,by being integrally formed together).

In the following description of the e-fuse structure according tovarious embodiments of the present invention, it is assumed that thesecond part 214 of the first bent portion, the extension pattern 245 andthe second auxiliary pattern 230, sequentially connected to one another,may form a “U”-shaped configuration.

In FIGS. 4 and 5, the first bent portion 210, and the extension pattern245 and the second auxiliary pattern 230 sequentially connected to thefirst bent portion 210, may form a spiral configuration, for example. Inaddition, the second part 214 of the first bent portion, the first part212 of the first bent portion and the second auxiliary pattern 230 mayextend in the first direction X to be parallel with each other. In oneembodiment, the first part 212 of the first bent portion and the secondpart 214 of the first bent portion are formed to be nearest to eachother among these three parallel components, and a distance between thefirst part 212 of the first bent portion and the second part 214 of thefirst bent portion is smaller than a distance between the second part214 of the first bent portion and the second auxiliary pattern 230.

The first metal pattern 200 may further include a first power supplyconnection part 240. The first power supply connection part 240 isconnected to the anode A shown in FIGS. 1 to 3. In FIGS. 4 and 5, thefirst power supply connection part 240 is connected to the extensionpattern 245 and is connected to the second part 214 of the first bentportion through the extension pattern 245. The first power supplyconnection part 240 may extend from the extension pattern 245 in thefirst direction X (and may be integrally formed therewith), but aspectsof the present invention are not limited thereto.

The first power supply connection part 240 may be positioned oppositethe first bent portion 210 with the extension pattern 245 positionedbetween the first power supply connection part 240 and the first bentportion 210. As such, in certain embodiments, a first end of the firstpart 212 of the first bent portion that is not connected to the thirdpart 216 of the first bent portion faces the first power supplyconnection part 240 with the extension pattern 245 positioned betweenthe first end of the first part 212 of the first bent portion and thefirst power supply connection part 240.

In the illustrated embodiment of FIGS. 4 and 5, the e-fuse structurefurther includes the first power supply connection part 240, but aspectsof the present invention are not limited thereto. For example, in a casewhere the extension pattern 245 extends in the second direction Y longerthan in FIGS. 4 and 5, the extension pattern 245 may be connected to theanode A shown in FIGS. 1 to 3 without the first power supply connectionpart 240.

In FIGS. 4 and 5, one end of the second auxiliary pattern 230 isconnected to the first power supply connection part 240 while the otherend of the second auxiliary pattern 230 is opened (e.g., floating). Forexample, the second auxiliary pattern 230 is branched off from theextension pattern 245, while the end of the second auxiliary pattern 230is opened. Therefore, even if a positive voltage is applied to the firstpower supply connection part 240 to supply a program current to thee-fuse structure 1, the current does not flow in the second auxiliarypattern 230. Thus, the second auxiliary pattern 230 is not used as apath of current migration.

The first metal pattern 200 may be made, for example, of one selectedfrom tungsten (W), aluminum (Al), copper (Cu) and a copper (Cu) alloy.Here, the copper (Cu) alloy may include C, Ag, Co, Ta, In, Sn, Zn, Mn,Ti, Mg, Cr, Ge, Sr, Pt, Mg, Al or Zr alloyed in Cu.

A barrier layer may further be formed between the first metal pattern200 and the interlayer insulation layer 110 to prevent a metallicmaterial constituting the first metal pattern 200 from being diffusedinto the interlayer insulation layer 110 around the first metal pattern200. For example, the barrier layer may include one of Ta, TaN, TaSiN,Ti, TiN, TiSiN, W, WN and combinations thereof.

Referring to FIGS. 4 and 5, the second metal pattern 300 may include asecond bent portion 310 and a second power supply connection part 340.

The second bent portion 310 includes a first part 312 and a second part314 facing each other and positioned to be near to each other. Thesecond part 314 of the second bent portion may extend in the seconddirection Y.

In addition, the second bent portion 310 may include a third part 316connecting the first part 312 of the second bent portion to the secondpart 314 of the second bent portion. The third part 316 of the secondbent portion may extend in the first direction X.

The third part 316 of the second bent portion connecting one end of thefirst part 312 of the second bent portion and one end of the second part314 of the second bent portion, which face each other, is illustrated inFIGS. 4 and 5, but aspects of the present invention are not limitedthereto. Similar to the description above, though certain angles andstraight line patterns are shown in FIGS. 4 and 5, the second bentportion 310 may include curved features and/or angled features.

The second metal pattern 300 is electrically connected to the firstmetal pattern 200. In one embodiment, the second bent portion 310 of thesecond metal pattern 300 is electrically connected to the first part 212of the first bent portion 210 of the first metal pattern 200. Morespecifically, the first part 312 of the second bent portion and thefirst part 212 of the first bent portion may be electrically connectedto each other, through the use of the first via 410, which is generallyreferred to herein as a via structure, or conductive via structure. Thismay be described as a direct electrical connection through the first via410, or a first via structure (e.g., only a via structure iselectrically connected between the first part 312 of the second bentportion and the first part 212 of the first bent portion).

A width of the first part 312 of the second bent portion may be a fourthwidth W3. For example, the width W3 of the first part 312 of the secondbent portion may mean a width of the second direction Y, and may referto a width between a first side of the first part 312 and an oppositeside of the first part 312 where the first part 312 meets the third part316.

In the e-fuse structure according to certain embodiments of the presentinvention, the width W3 of the first part 312 of the second bent portionis greater than a width W4 of the first part 212 of the first bentportion electrically connected to the second metal pattern 300.

When a program current is supplied to the e-fuse structure according toone embodiment of the present invention, the first part 312 of thesecond bent portion, the first part 212 of the first bent portion andthe second part 214 of the first bent portion are used as paths for theflow of current.

Here, the width W3 of the first part 312 of the second bent portion isgreater than the width W4 of the first part 212 of the first bentportion, and the width W4 of the first part 212 of the first bentportion is greater than the width W1 of the second part 214 of the firstbent portion. It is assumed that the first metal pattern 200 and thesecond metal pattern 300 have the same thickness in a third direction Z.When the program current is supplied to the e-fuse structure, a currentdensity of the second part 214 of the first bent portion is greater thana current density of the first part 212 of the first bent portion, andthe current density of the first part 212 of the first bent portion isgreater than a current density of the first part 312 of the second bentportion. Therefore, among the second part 214 of the first bent portion,the first part 212 of the first bent portion and the first part 312 ofthe second bent portion, the second part 214 of the first bent portionmay have the greatest current density.

Since the second metal pattern 300 includes the second bent portion 310,a relatively large amount of Joule's heat may be generated in the firstbent portion 210. Further, since the first metal pattern 200 includesthe first bent portion 210, heat integration in the e-fuse structure canbe enhanced.

The second power supply connection part 340 of the second metal pattern300 is connected to the cathode C shown in FIGS. 1 to 3. The secondpower supply connection part 340 is connected to the second part 314 ofthe second bent portion. The second power supply connection part 340 mayextend from the second part 314 of the second bent portion in the firstdirection X, but aspects of the present invention are not limitedthereto.

The second metal pattern 300 may be made, for example, of one selectedfrom tungsten (W), aluminum (Al), copper (Cu) and a copper (Cu) alloy.Here, the copper (Cu) alloy may include C, Ag, Co, Ta, In, Sn, Zn, Mn,Ti, Mg, Cr, Ge, Sr, Pt, Mg, Al or Zr alloyed in Cu.

A barrier layer may further be formed between the second metal pattern300 and the interlayer insulation layer 110 to prevent a metallicmaterial constituting the second metal pattern 300 from being diffusedinto the interlayer insulation layer 110 around the second metal pattern300. For example, the barrier layer may include one of Ta, TaN, TaSiN,Ti, TiN, TiSiN, W, WN and combinations thereof.

The first via 410, also referred to as a conductive via, is formedbetween the first metal pattern 200 and the second metal pattern 300.The first via 410 connects the first metal pattern 200 to the secondmetal pattern 300.

The first via 410 connects the first bent portion 210 to the second bentportion 310. Specifically, the first via 410 connects the first part 212of the first bent portion to the first part 312 of the second bentportion.

The first via 410 may be made, for example, of one selected fromtungsten (W), aluminum (Al), copper (Cu) and a copper (Cu) alloy. Here,the copper (Cu) alloy may include C, Ag, Co, Ta, In, Sn, Zn, Mn, Ti, Mg,Cr, Ge, Sr, Pt, Mg, Al or Zr alloyed in Cu.

A barrier layer may further be formed between the first via 410 and theinterlayer insulation layer 110 to prevent a metallic materialconstituting the first via 410 from being diffused into the interlayerinsulation layer 110 around the first via 410. For example, the barrierlayer may include one of Ta, TaN, TaSiN, Ti, TiN, TiSiN, W, WN andcombinations thereof.

In a case where a positive voltage is applied to the first power supplyconnection part 240 of the first metal pattern 200 and a negativepositive voltage is applied to the second power supply connection part340 of the second metal pattern 300, electrons pass to the first via 410through the second bent portion 310 and migrate to the first bentportion 210. Here, the first auxiliary pattern 220 and the secondauxiliary pattern 230 are not used as conductive wires for the flow ofelectrons.

In the e-fuse structure 1 according to the first embodiment of thepresent invention, the first power supply connection part 240 and thesecond power supply connection part 340 are positioned at opposite sidesof the first via 410 in the first direction X.

In addition, in the e-fuse structure 1 according to the first embodimentof the present invention, the third part 316 of the second bent portion,the second part 214 of the first bent portion and the first auxiliarypattern 220 are positioned at the same side of the first via 410 in thesecond direction Y.

In order to enhance heat generation in the e-fuse structure, the firstmetal pattern 200 and the second metal pattern 300 respectivelyincluding the first bent portion 210 and the second bent portion 310 areformed. If lengths of the first bent portion 210 and the second bentportion 310 are increased, the heat generation in the e-fuse structurecan be further enhanced. In this case, however, a current density may bereduced due to increased resistance. If the current density of a regionwhere creation of void is intended is reduced, the voltage applied tothe e-fuse structure should be increased to compensate for the reductionin the current density. Thus, in a case where the voltage applied to thee-fuse structure is increased, the e-fuse structure may not be able tobe programmed, the reliability of a semiconductor device including thee-fuse structure may be impaired.

However, in the e-fuse structure according to certain embodiments of thepresent invention, a metal pattern is not formed in a space between thefirst part 212 of the first bent portion connected to the first via 410and the extension pattern 245 connected to the first bent portion 210,and the extension pattern 245 and the first part 212 of the first bentportion may directly face each other. In addition, since a metal patternis not formed in a space between the first part 312 of the second bentportion connected to the first via 410 and the second part 314 of thesecond bent portion connected to the second power supply connection part340, the first part 312 of the second bent portion and the second part314 of the second bent portion may directly face each other.

Therefore, the e-fuse structures according to the embodiments describedherein can perform programming while enhancing heat integration.

Next, e-fuse structures according to second and third embodiments of thepresent invention will be described with reference to FIGS. 7 to 10.

FIGS. 7 and 8 are schematic views illustrating an e-fuse structureaccording to a second embodiment of the present invention and FIGS. 9and 10 are schematic views illustrating an e-fuse structure according toa third embodiment of the present invention.

Specifically, FIGS. 7 and 9 are plan views of e-fuse structuresaccording to second and third embodiments of the present invention andFIGS. 8 and 9 are perspective views of the e-fuse structures accordingto the second and third embodiments of the present invention. For thesake of convenient explanation, the following description will focus ondifferences between the e-fuse structures shown in FIGS. 4 to 6 and thee-fuse structures shown in FIGS. 7 to 10.

Referring to FIGS. 7 and 8, in the e-fuse structure 2 according to thesecond embodiment of the present invention, a second metal pattern 300further includes a third auxiliary pattern 320.

The third auxiliary pattern 320 extends in the first direction X. A sidesurface of the third auxiliary pattern 320 faces a side surface of thethird part 316 of a second bent portion with a first part 312 of thesecond bent portion and a second part 314 of the second bent portionpositioned between the third auxiliary pattern 320 and the third part316 of the second bent portion.

One end of the second part 314 of the second bent portion may beconnected to the third part 316 of the second bent portion and the otherend of the second part 314 of the second bent portion may be connectedto the third auxiliary pattern 320.

In the illustrated embodiment, the second bent portion 310 and the thirdauxiliary pattern 320 are connected to each other. However, when aprogram current is supplied to the e-fuse structure, the third auxiliarypattern 320 is not used as a path for the flow of current.

The third auxiliary pattern 320 connected to the second bent portion 310is illustrated in FIGS. 7 and 8, but aspects of the present inventionare not limited thereto. For example, the third auxiliary pattern 320and the second part 314 of the second bent portion may be spaced apartfrom each other to then be electrically disconnected.

The third auxiliary pattern 320 prevents Joule's heat generated from thesecond bent portion 310 from emanating to the vicinity of the e-fuse,thereby enhancing heat integration in the e-fuse structure.

Referring to FIGS. 9 and 10, in the e-fuse structure 3 according to thethird embodiment of the present invention, a second metal pattern 300further includes a third auxiliary pattern 320 including a first part322 and a second part 324.

The first part 322 of the third auxiliary pattern 320 extends in thefirst direction X. The second part 324 of the third auxiliary pattern320 extends in the second direction Y.

A side surface of the first part 322 of the third auxiliary pattern 320faces a side surface of the third part 316 of a second bent portion withthe first part 312 of the second bent portion and the second part 314 ofthe second bent portion positioned between the first part 322 of thethird auxiliary pattern 320 and the third part 316 of the second bentportion. The second part 324 of the third auxiliary pattern 320 isformed to be parallel with the second part 314 of the second bentportion with the first part 312 of the second bent portion positionedbetween the second part 324 of the third auxiliary pattern 320 and thesecond part 314 of the second bent portion.

The first part 322 of the third auxiliary pattern 320 may be connectedto the second bent portion 310, specifically to the second part 314 ofthe second bent portion and the second part 324 of the third auxiliarypattern 320. The first part 322 of the third auxiliary pattern 320 andthe third auxiliary pattern 320 connected to the second part 324 of thethird auxiliary pattern 320 may form an “L” configuration, but aspectsof the present invention are not limited thereto.

While the third auxiliary pattern 320 is connected to the second powersupply connection part 340, one end of the second part 324 of the thirdauxiliary pattern 320 is opened (e.g., floating), so that the thirdauxiliary pattern 320 is not used as a path for the flow of current whena program current is supplied to the e-fuse structure.

The third auxiliary pattern 320 connected to the second bent portion 310is illustrated in FIGS. 9 and 10, but aspects of the present inventionare not limited thereto. For example, in one embodiment, the thirdauxiliary pattern 320 and the second part 314 of the second bent portionmay be spaced apart from each other to then be electricallydisconnected.

In addition, the first part 322 of the third auxiliary pattern 320 andthe second part 324 of the third auxiliary pattern 320 are connected toeach other in the illustrated embodiment, but aspects of the presentinvention are not limited thereto.

Hereinafter, e-fuse structures according to fourth to sixth embodimentsof the present invention will be described with reference to FIGS. 11 to13.

FIG. 11 is a schematic view illustrating an e-fuse structure accordingto a fourth embodiment of the present invention, FIG. 12 is a schematicview illustrating an e-fuse structure according to a fifth embodiment ofthe present invention, and FIG. 13 is a schematic view illustrating ane-fuse structure according to a sixth embodiment of the presentinvention. For the sake of convenient explanation, the followingdescription will focus on differences between the e-fuse structuresshown in FIGS. 4 to 6 and the e-fuse structures shown in FIGS. 11 to 13.

More specifically, FIG. 11 illustrates that the second metal pattern 300shown in FIG. 4 is rotated 180° (e.g., flipped) about an axis extendingin the second direction Y (e.g., an axis crossing the first via 410),FIG. 12 illustrates that the second metal pattern 300 shown in FIG. 4 isrotated 180° (e.g., flipped) about an axis extending in the firstdirection X (e.g., an axis crossing the first via 410), and FIG. 13illustrates that the second metal pattern 300 shown in FIG. 4 is rotatedcounterclockwise 90° about an axis extending in the third direction Z(also described as a pivot point, which may be at a center of the firstvia 410 when viewed in a plan view).

Referring to FIG. 11, in the e-fuse structure 4 according to the fourthembodiment of the present invention, a first power supply connectionpart 240 and a second power supply connection part 340 are positioned atthe same side of a first via 410 in the first direction X.

Referring to FIG. 12, in the e-fuse structure 5 according to the fifthembodiment of the present invention, a third part 316 of a second bentportion and a second part 214 of a first bent portion are positioned atopposite sides of the first via 410 in the second direction Y.

In addition, a third part 316 of the second bent portion and a firstauxiliary pattern 220 are positioned at opposite sides of the first via410 in the second direction Y.

Referring to FIG. 13, in the e-fuse structure 6 according to the sixthembodiment of the present invention, a second part 314 of a second bentportion extends in the first direction X. In addition, a third part 316of the second bent portion extends in the second direction Y.

In FIG. 13, the second metal pattern 300 shown in FIG. 4 is rotatedcounterclockwise 90° about the third direction Z, but aspects of thepresent invention are not limited thereto. For example, the second metalpattern 300 shown in FIG. 4 may also be rotated clockwise 90° about thethird direction Z.

Alternatively, the second metal pattern 300 shown in FIG. 4 may also berotated counterclockwise 180° about the third direction Z.

Hereinafter, an e-fuse structure according to a seventh embodiment ofthe present invention will be described with reference to FIGS. 14 to16. The seventh embodiment is substantially the same as the firstembodiment shown in FIGS. 4 to 6, except for a third metal pattern, thesame functional components are denoted by the same reference numerals asthose of the previous embodiment and descriptions thereof will bebriefly made or will not be made.

FIGS. 14 to 16 are schematic views illustrating an e-fuse structureaccording to a seventh embodiment of the present invention.

Specifically, FIG. 14 is a plan view of the e-fuse structure accordingto the seventh embodiment of the present invention, FIG. 15 is aperspective view of the e-fuse structure shown in FIG. 14, and FIG. 16is a cross-sectional view taken along the line B-B of FIG. 14. Forbrevity, an interlayer insulation layer 110 is not illustrated in FIGS.14 and 15.

Referring to FIGS. 14 to 16, the e-fuse structure 7 according to theseventh embodiment of the present invention may include a first metalpattern 200, a second metal pattern 300, a third metal pattern 500, asecond via 420 and a third via 430.

The first metal pattern 200 is formed at a first metal level, orvertical level, the second metal pattern 300 is formed at a second metallevel, or vertical level, different from the first metal/vertical level,and the third metal pattern 500 is formed at a third metal/verticallevel between the first metal/vertical level and the secondmetal/vertical level.

The first metal level may be higher than the second metal level. Inother words, a height ranging from a top surface of a substrate 102 tothe first metal level having the first metal pattern 200 formed thereatis greater than a height ranging from the top surface of the substrate102 to the second metal level having the second metal pattern 300 formedthereat. Therefore, the second metal level, the third metal level andthe first metal level may be positioned sequentially from the topsurface of the substrate 102 in that order.

In the e-fuse structure according to one embodiment of the presentinvention, the first metal pattern 200 is connected to the anode A shownin FIGS. 1 to 3 and a positive voltage is applied thereto, and thesecond metal pattern 300 is connected to the cathode C shown in FIGS. 1to 3 and a negative voltage is applied thereto.

The first metal pattern 200 includes a first bent portion 210, a firstauxiliary pattern 220, a second auxiliary pattern 230 and a first powersupply connection part 240.

The first bent portion 210 includes a first part 212, a second part 214and a third part 216. The first part 212 of the first bent portion andthe second part 214 of the first bent portion extend in the firstdirection X and are formed to be parallel to each other so as to beadjacent to each other. The third part 216 of the first bent portionextends in the second direction Y. The third part 216 of the first bentportion connects the first part 212 of the first bent portion and thesecond part 214 of the first bent portion to electrically connect thefirst part 212 of the first bent portion and the second part 214 of thefirst bent portion.

The third part 216 of the first bent portion connecting one end of thefirst part 212 of the first bent portion and one end of the second part214 of the first bent portion, which face each other, is illustrated inFIGS. 4 and 5, but aspects of the present invention are not limitedthereto.

The first auxiliary pattern 220 extends in the first direction X and isformed to be adjacent with the second part 214 of the first bentportion. A side surface of the first auxiliary pattern 220 faces a sidesurface of the first part 212 of the first bent portion with the secondpart 214 of the first bent portion positioned between the firstauxiliary pattern 220 and the first part 212 of the first bent portion.

The first auxiliary pattern 220 is spaced apart from the first bentportion 210 to then be electrically disconnected from the first bentportion 210.

The second auxiliary pattern 230 may extend in the first direction X.The second auxiliary pattern 230 may include a side surface facing aside surface of the second part 214 of the first bent portion with thefirst part 212 of the first bent portion between the second auxiliarypattern 230 and the second part 214 of the first bent portion.

The first power supply connection part 240 is connected to the secondpart 214 of the first bent portion through the extension pattern 245.The first power supply connection part 240 is connected to the anode Ashown in FIGS. 1 to 3. One end of the second part 214 of the first bentportion that is not connected to the third part 216 of the first bentportion and one end of the second auxiliary pattern 230 may be connectedto each other by the extension pattern 245.

The one end of the second part 214 of the first bent portion isconnected to the first part 212 of the first bent portion and the otherend of the second part 214 of the first bent portion is connected to thefirst power supply connection part 240.

While the one end of the second auxiliary pattern 230 is connected tothe first power supply connection part 240, the other end of the secondauxiliary pattern 230 is opened, so that a current does not flow in thesecond auxiliary pattern 230 even when a program current is supplied tothe e-fuse structure 7. Even if the second auxiliary pattern 230 is notused as a path for the flow of current, heat integration is enhanced,thereby improving programming characteristics of the e-fuse structure 7.

The second metal pattern 300 may include a second bent portion 310 and asecond power supply connection part 340.

The second bent portion 310 includes a first part 312, a second part 314and a third part 316. The second part 314 of the second bent portion ispositioned to be adjacent to the first part 312 of the second bentportion while including a side surface facing a side surface of thefirst part 312 of the second bent portion, and extends in the seconddirection Y.

The third part 316 of the second bent portion may connect the first part312 of the second bent portion to the second part 314 of the second bentportion and may extend in the first direction X. For example, the thirdpart 316 of the second bent portion may connect one end of the firstpart 312 of the second bent portion and one end of the second part 314of the second bent portion, which include side surfaces facing eachother.

The second power supply connection part 340 of the second metal pattern300 is connected to the cathode C shown in FIGS. 1 to 3. The secondpower supply connection part 340 is connected to the second part 314 ofthe second bent portion. The second power supply connection part 340 mayextend from the second part 314 of the second bent portion in the firstdirection X, but aspects of the present invention are not limitedthereto.

In one embodiment, the third metal pattern 500 may extend in the seconddirection Y.

The third metal pattern 500 may be made of one or more selected, forexample, from tungsten (W), aluminum (Al), copper (Cu) and a copper (Cu)alloy. Here, the copper (Cu) alloy may include C, Ag, Co, Ta, In, Sn,Zn, Mn, Ti, Mg, Cr, Ge, Sr, Pt, Mg, Al or Zr alloyed in Cu.

A barrier layer may further be formed between the third metal pattern500 and the interlayer insulation layer 110 to prevent a metallicmaterial constituting the third metal pattern 500 from being diffusedinto the interlayer insulation layer 110 around the third metal pattern500. For example, the barrier layer may include one of Ta, TaN, TaSiN,Ti, TiN, TiSiN, W, WN and combinations thereof.

The second via 420 is formed between the first metal pattern 200 and thethird metal pattern 500. The second via 420 connects the first metalpattern 200 to the third metal pattern 500.

In detail, the second via 420 connects the first metal pattern 200,specifically the first part 212 of the first bent portion, to the thirdmetal pattern 500.

The third via 430 is formed between the second metal pattern 300 and thethird metal pattern 500. The third via 430 connects the second metalpattern 300 to the third metal pattern 500.

In detail, the third via 430 connects the second metal pattern 300,specifically the first part 312 of the second bent portion, to the thirdmetal pattern 500. The combination of the second via 420, the thirdmetal pattern 500, and the third via 430 may be referred to herein as avia structure, or conductive via structure.

Since the third metal pattern 500 extends in the second direction Y, thesecond via 420 and the third via 430 connected to the third metalpattern 500 are arranged along the second direction Y.

A distance D between the second via 420 and the third via 430 connectedto the third metal pattern 500 (e.g., in the Y direction) may be withina Blech length (e.g., equal to or less than a Blech length). The term“Blech length” used herein may mean a lower limit for electromigrationto be caused.

For example, when the distance D between the second via 420 and thethird via 430 connected to the third metal pattern 500 is within a Blechlength of the third metal pattern 500, electromigration is not causedbetween the second via 420 and the third via 430. In other words, a voidor hill-lock due to electromigration is not created in the third metalpattern 500.

Each of the second via 420 and the third via 430 may be made of one ormore selected, for example, from tungsten (W), aluminum (Al), copper(Cu) and a copper (Cu) alloy. Here, the copper (Cu) alloy may include C,Ag, Co, Ta, In, Sn, Zn, Mn, Ti, Mg, Cr, Ge, Sr, Pt, Mg, Al or Zr alloyedin Cu.

A barrier layer may further be formed between the second via 420 and theinterlayer insulation layer 110 and/or between the third via 430 and theinterlayer insulation layer 110 to prevent a metallic materialconstituting the second via 420 and/or the third via 430 from beingdiffused into the interlayer insulation layer 110 around the third metalpattern 500. For example, the barrier layer may include one of Ta, TaN,TaSiN, Ti, TiN, TiSiN, W, WN and combinations thereof.

A width of the first part 212 of the first bent portion may be a firstwidth W4, a width of the second part 214 of the first bent portion maybe a second width W1, a width of the third part 216 of the first bentportion may be a third width W2, and a width of the first part 312 ofthe second bent portion may be a fourth width W3. The width W4 of thefirst part 212 of the first bent portion, the width W1 of the secondpart 214 of the first bent portion and the width W3 of the first part312 of the second bent portion may mean widths in the second directionY, and the width W2 of the third part 216 of the first bent portion maymean a width in the first direction X.

In addition, a width of the second via 420 is a fifth width W6, and awidth of the third via 430 is a sixth width W5. In FIGS. 14 and 16, thewidth W6 of the second via 420 and the width W5 of the third via 430 arewidths in the second direction Y, which is, however, provided only forillustration, but aspects of the present invention are not limitedthereto. For example, the width W6 of the second via 420 and the widthW5 of the third via 430 may also be widths in the first direction X. Inthe following description, it is assumed that the width W6 of the secondvia 420 and the width W5 of the third via 430 are the widths in thesecond direction Y.

In the e-fuse structure 7 according to the seventh embodiment of thepresent invention, the width W4 of the first part 212 of the first bentportion is greater than the width W1 of the second part 214 of the firstbent portion. In addition, the width W2 of the third part 216 of thefirst bent portion is greater than the width W1 of the second part 214of the first bent portion. That is to say, the width W1 of the secondpart 214 in the first bent portion may have the smallest value.

In addition, in the e-fuse structure 7 according to the seventhembodiment of the present invention, the width W3 of the first part 312of the second bent portion is greater than the width W4 of the firstpart 212 of the first bent portion.

In the e-fuse structure 7 according to the seventh embodiment of thepresent invention, the width W5 of the third via 430 is equal to thewidth W6 of the second via 420 or greater than the width W6 of thesecond via 420.

Since the third via 430 is connected to the first part 312 of the secondbent portion, the width W3 of the first part 312 of the second bentportion may be greater than the width W5 of the third via 430. Since thesecond via 420 is connected to the first part 212 of the first bentportion, the width W6 of the second via 420 and the width W4 of thefirst part 212 of the first bent portion may be substantially equal toeach other.

When a program current is supplied to the e-fuse structure, in terms ofa width of a path for migration of electrons between the cathode C andthe anode A, the width W3 of the first part 312 of the second bentportion is greater than the width W5 of the third via 430. The width W5of the third via 430 is equal to the width W6 of the second via 420 orgreater than the width W6 of the second via 420. The width W6 of thesecond via 420 and the width W4 of the first part 212 of the first bentportion are substantially equal to each other. The width W4 of the firstpart 212 of the first bent portion is greater than the width W1 of thesecond part 214 of the first bent portion.

In the e-fuse structure 7 according to the seventh embodiment of thepresent invention, the second part 214 of the first bent portion may bea region where a void is created when a program current is supplied,which will be described in detail with reference to FIG. 32.

In FIG. 14, the third via 430 is positioned between the second via 420and the first auxiliary pattern 220, but aspects of the presentinvention are not limited thereto. For example, the second metal pattern300 may move in the second direction Y, so that the second via 420 ispositioned between the third via 430 and the second auxiliary pattern230.

Next, e-fuse structures according to eighth and ninth embodiments of thepresent invention will be described with reference to FIGS. 17 to 20.

FIGS. 17 and 18 are schematic views illustrating an e-fuse structureaccording to an eighth embodiment of the present invention and FIGS. 19and 20 are schematic views illustrating an e-fuse structure according toa ninth embodiment of the present invention. For the sake of convenientexplanation, the following description will focus on differences betweenthe e-fuse structures shown in FIGS. 14 to 16 and the e-fuse structuresshown in FIGS. 17 and 18.

Referring to FIGS. 17 and 18, in the e-fuse structure 8 according to theeighth embodiment of the present invention, a second metal pattern 300further includes a third auxiliary pattern 320.

The third auxiliary pattern 320 extends in the first direction X. A sidesurface of the third auxiliary pattern 320 faces a side surface of thethird part 316 of the second bent portion with the first part 312 of thesecond bent portion and the second part 314 of the second bent portionpositioned between the third auxiliary pattern 320 and the third part316 of the second bent portion. The third auxiliary pattern 320 may beconnected to the second part 314 of the second bent portion, but aspectsof the present invention are not limited thereto.

Referring to FIGS. 19 and 20, in the e-fuse structure 9 according to theninth embodiment of the present invention, a second metal pattern 300further includes a third auxiliary pattern 320 including a first part322 and a second part 324.

The first part 322 of the third auxiliary pattern 320 extends in thefirst direction X. The second part 324 of the third auxiliary pattern320 extends in the second direction Y. A side surface of the first part322 of the third auxiliary pattern 320 faces a side surface of the thirdpart 316 of the second bent portion and is formed to be parallel withthe second part 314 of the second bent portion with the first part 312of the second bent portion and the second part 314 of the second bentportion positioned between the first part 322 of the third auxiliarypattern 320 and the third part 316 of the second bent portion.

In FIGS. 19 and 20, the third auxiliary pattern 320 is connected to thesecond bent portion 310, but aspects of the present invention are notlimited thereto. In addition, the first part 322 of the third auxiliarypattern 320 is connected to the second part 324 of the third auxiliarypattern 320, but aspects of the present invention are not limitedthereto.

Next, e-fuse structures according to tenth and eleventh embodiments ofthe present invention will be described with reference to FIGS. 21 to24.

FIGS. 21 and 22 are schematic views illustrating an e-fuse structureaccording to a tenth embodiment of the present invention and FIGS. 23and 24 are schematic views illustrating an e-fuse structure according toan eleventh embodiment of the present invention.

For the sake of convenient explanation, the following description willfocus on differences between the e-fuse structures shown in FIGS. 19 and20 and the e-fuse structures shown in FIGS. 21 and 22.

Referring to FIGS. 21 and 22, in the e-fuse structure 10 according tothe tenth embodiment of the present invention, a third metal pattern 500includes a connection pattern 510 and fourth auxiliary patterns 520.

The connection pattern 510 extends in the second direction Y. The fourthauxiliary patterns 520 are formed at opposite sides of the connectionpattern 510. The fourth auxiliary patterns 520 may extend in the seconddirection Y and may be formed to be parallel with the connection pattern510.

A second via 420 and a third via 430 are connected to the connectionpattern 510. The combination of the second via 420, third via 430, andconnection pattern 510 described in the various embodiments herein maybe referred to as a via structure, or conductive via structure. Forexample, in one embodiment, the connection pattern 510 is electricallyconnected to a first bent portion 210 of a first metal pattern 200 and asecond bent portion 310 of a second metal pattern 300.

In FIGS. 21 and 22, the fourth auxiliary pattern 520 is electricallydisconnected from the connection pattern 510, but aspects of the presentinvention are not limited thereto.

In the e-fuse structure 10 according to the tenth embodiment of thepresent invention, the second via 420 and the third via 430 connected tothe connection pattern 510 are positioned between the fourth auxiliarypatterns 520. In other words, the fourth auxiliary pattern 520 arepositioned at the opposite sides of the second via 420 in the firstdirection X and are positioned at the opposite sides of the third via430 in the first direction X.

The fourth auxiliary patterns 520 may reduce a width of the connectionpattern 510 positioned between the fourth auxiliary patterns 520. Forexample, since the fourth auxiliary patterns 520 are formed at theopposite sides of the connection pattern 510, it is possible to preventthe width of the connection pattern 510 from increasing.

In addition, the fourth auxiliary patterns 520 prevent Joule's heatgenerated from the connection pattern 510 from being rapidly propagatedto the vicinity of the e-fuse structure, thereby enhancing heatintegration in the e-fuse structure.

Referring to FIGS. 23 and 24, in the e-fuse structure 11 according to aneleventh embodiment of the present invention, a third metal pattern 500includes a connection pattern 510 and fourth auxiliary patterns 520.

The connection pattern 510 extends in the second direction Y. The fourthauxiliary patterns 520 are formed at opposite sides of a portion of theconnection pattern 510 so as to be parallel with the connection pattern510. A second via 420 and a third via 430 are connected to theconnection pattern 510.

In the e-fuse structure 11 according to an eleventh embodiment of thepresent invention, the second via 420 connected to the connectionpattern 510 is positioned between the fourth auxiliary patterns 520along a Z axis, while the third via 430 connected to the connectionpattern 510 is not positioned between the fourth auxiliary patterns 520along the same Z axis. In other words, the fourth auxiliary patterns 520are positioned at opposite sides of the second via 420 in the firstdirection X (along the Z axis) but are not positioned at opposite sidesof the third via 430 in the first direction X (along the same Z axis).

A width of a portion of the connection pattern 510 connected to thesecond via 420 may be a seventh width W7, and a width of a portion ofthe connection pattern 510 connected to the third via 430 may be aneighth width W8. The width W7 of the portion of the connection pattern510 connected to the second via 420 and the width W8 of the connectionpattern 510 connected to the third via 430 may mean widths in adifferent direction from a direction in which the connection pattern 510extends. For example, in the e-fuse structure 11 according to theeleventh embodiment of the present invention, the width W7 of theportion of the connection pattern 510 connected to the second via 420and the width W8 of the connection pattern 510 connected to the thirdvia 430 may mean widths in the first direction X.

In the e-fuse structure 11 according to the eleventh embodiment of thepresent invention, connection pattern 510, the width W7 of the portionof the connection pattern 510 connected to the second via 420 is smallerthan the width W8 of the connection pattern 510 connected to the thirdvia 430. Since the fourth auxiliary patterns 520 are positioned atopposite sides of the portion of the connection pattern 510 connected tothe second via 420, the width of the portion of the connection pattern510 connected to the second via 420 is prevented from increasing duringa photolithography process for forming the connection pattern 510.

Next, e-fuse structures according to twelfth to fourteenth embodimentsof the present invention will be described with reference to FIGS. 25 to30.

FIGS. 25 and 26 are schematic views illustrating an e-fuse structureaccording to a twelfth embodiment of the present invention, FIGS. 27 and28 are schematic views illustrating an e-fuse structure according to athirteenth embodiment of the present invention and FIGS. 29 and 30 areschematic views illustrating an e-fuse structure according to afourteenth embodiment of the present invention. For the sake ofconvenient explanation, the following description will focus ondifferences between the e-fuse structures shown in FIGS. 19 and 20 andthe e-fuse structures shown in FIGS. 25 and 26.

Referring to FIGS. 25 and 26, in the e-fuse structure 12 according tothe twelfth embodiment of the present invention, a third metal pattern500 extends in a first direction X.

Since the third metal pattern 500 extends in the first direction X, asecond via 420 and a third via 430 connected to the third metal pattern500 are arranged along the first direction X.

In FIG. 25, from the viewpoint of a plane, the third via 430 ispositioned to be nearer to a third part 216 of a first bent portion thanthe second via 420, but aspects of the present invention are not limitedthereto. For example, since the second metal pattern 300 moves in thefirst direction X, the second via 420 may be positioned to be nearer tothe third part 216 of the first bent portion than the third via 430.

Referring to FIGS. 27 and 28, in the e-fuse structure 13 according tothe thirteenth embodiment of the present invention, a third metalpattern 500 includes a connection pattern 510 extending in the firstdirection X and fourth auxiliary patterns 520 formed at opposite sidesof the connection pattern 510.

The fourth auxiliary patterns 520 may extend in the first direction Xand may be formed to be parallel to the connection pattern 510.

The second via 420 and the third via 430 are connected to the connectionpattern 510. For example, the connection pattern 510 is electricallyconnected to a first bent portion 210 of a first metal pattern 200 and asecond bent portion 310 of a second metal pattern 300.

In the e-fuse structure 12 according to the twelfth embodiment of thepresent invention, the second via 420 and the third via 430 connected tothe connection pattern 510 are positioned between the fourth auxiliarypatterns 520. In other words, the fourth auxiliary patterns 520 arepositioned at opposite sides of the second via 420 in the seconddirection Y and are positioned at opposite sides of the third via 430 inthe second direction Y.

Referring to FIGS. 29 and 30, in the e-fuse structure 14 according tothe fourteenth embodiment of the present invention, a third metalpattern 500 includes a connection pattern 510 extending in the firstdirection X and fourth auxiliary patterns 520 formed at opposite sidesof a portion of the connection pattern 510.

The fourth auxiliary patterns 520 may extend in the first direction Xand may be formed to be parallel with the portion of the connectionpattern 510.

In the e-fuse structure 14 according to the fourteenth embodiments ofthe present invention, a second via 420 connected to the connectionpattern 510 is positioned between the fourth auxiliary patterns 520,while a third via 430 connected to the connection pattern 510 is notpositioned between the fourth auxiliary patterns 520. In other words,the fourth auxiliary patterns 520 are positioned at opposite sides ofthe second via 420 in the second direction Y but are not positioned atopposite sides of the third via 430 in the second direction Y.

FIG. 31 is a schematic diagram illustrating modified examples of theseventh to fourteenth embodiments of the present invention.

Referring to FIG. 31, in the e-fuse structures 7-14 according to theembodiments of the present invention, the second metal pattern 300 maybe rotated about the first direction X, the second direction Y and thethird direction Z, respectively.

For example, the second metal pattern 300 may be rotated 180° about anaxis extending in the first direction X to become a combination of thefirst metal pattern 200 and the third metal pattern 500 shown in FIGS.14 to 30. The second metal pattern 300 may be rotated 180° about an axisextending in the second direction Y to become a combination of the firstmetal pattern 200 and the third metal pattern 500 shown in FIGS. 14 to30.

In addition, the second metal pattern 300 may be rotated clockwise orcounterclockwise 90° or 180° about an axis extending in the thirddirection Z to become a combination of the first metal pattern 200 andthe third metal pattern 500 shown in FIGS. 14 to 30.

FIG. 32 illustrates that a void is created when a program current issupplied to e-fuse structures according to certain embodiments of thepresent invention. For the sake of convenient explanation, the creationof void will be described with regard to a case where a program currentis supplied to the e-fuse structure 10 according to the tenth embodimentof the present invention.

The supplying of the program current to the e-fuse structure 10 includesapplying a positive voltage to the first power supply connection part240 and applying a negative voltage to the second power supplyconnection part 340.

When the program current is supplied to the e-fuse structures 1-14according to the embodiments of the present invention, the width W1 ofthe second part 214 of the first bent portion 210 is smallest, so thatthe current density is highest at the second part 214 of the first bentportion 210. Thus, a driving force derived from electromigration can bemaximized at the second part 214 of the first bent portion 210. Inaddition, since the width W2 of the third part 216 of the first bentportion 210 connected to the second part 214 of the first bent portion210 is greater than the width W1 of the second part 214 of the firstbent portion 210, current integration may be facilitated at the secondpart 214 of the first bent portion 210.

In addition, when the program current is supplied to the e-fusestructures 1-14 according to the embodiments of the present invention,the second via 420 of each of the e-fuse structures may be a point atwhich the temperature is highest.

Referring to FIGS. 1 to 3, when the program current is supplied to thee-fuse structure, programming of the e-fuse structure occurs between apoint at which the temperature is highest and the anode A. Therefore,the programming of the e-fuse structure may occur at the first bentportion 210. In addition, the programming point may not be the point ofthe e-fuse structure, where the temperature is highest, but may bearound a point at which a temperature variation is severest in thee-fuse structure (that is, a point having the highest differential valueof a temperature distribution), which is because the driving forcederived from thermomigration becomes maximized at the point of thee-fuse structure where a severest temperature variation is demonstrated.Therefore, the driving force derived from thermomigration may be notapplied to the first part 212 of the first bent portion 210 connected tothe second via 420 having the highest temperature, but be applied to thesecond part 214 and the third part 216 of the first bent portion 210.

A sum of the driving force derived from electromigration and the drivingforce derived from thermomigration is a total driving force applied tothe e-fuse structure. Therefore, from the viewpoint of total drivingforce, the total driving force supplied from the second part 214 of thefirst bent portion 210 to the e-fuse structure may become maximized. Assuch, when a program current is supplied to the e-fuse structure, a void250 is formed at the second part 214 of the first bent portion 210,thereby programming the e-fuse structure.

FIG. 33 is a schematic block diagram illustrating an exemplary memorysystem including semiconductor devices according to embodiments of thepresent invention.

Referring to FIG. 33, memory system 1100 may be applied to an electronicdevice such as a personal digital assistant (PDA), a portable computer,a web tablet, a wireless phone, a mobile phone, a digital music player,a memory card, or any device capable of transmitting and receivinginformation in wireless circumstances.

The memory system 1100 includes a controller 1110, an input/outputdevice (I/O) 1120, such as a keypad, a keyboard, or a display, a memory1130, an interface 1140, and a bus 1150. The memory 1130 and theinterface 1140 communicate with each other through the bus 1150.

The controller 1110 may include at least one of a microprocessor, adigital signal processor, a microcontroller, and logic elements capableof functions similar to those of these elements. The memory 1130 may beused to store commands executed by the controller 1110. The I/O 1120 mayreceive data or signals from the outside of the memory system 1100 ormay output data or signals to the outside of the memory system 1100. TheI/O 1120 may include, for example, a keypad, a keyboard, a displaydevice, and so on. The memory 1130 includes a non-volatile memory. Thememory 1130 may further include another kind of memory, an arbitraryaccessible volatile memory, and other kinds of memories. The variouse-fuses described above may be used, for example, in the memory 1130.

The interface 1140 may perform functions of transmitting data to acommunication network or receiving data from the communication network.

FIG. 34 is a schematic block diagram illustrating an exemplary memorycard including semiconductor devices according to embodiments of thepresent invention.

Referring to FIG. 34, the memory card 1200 for supporting high-capacitydata storage includes a flash memory 1210 according to one or moreembodiments of the present invention. The memory card 1200 according toone embodiment includes a memory controller 1220 controlling dataexchange between a host and the flash memory 1210.

A static random access memory (SRAM) 1221 may operate as a workingmemory of the processing unit 1222. The host interface 1223 includes adata exchange protocol of the host connected to the memory card 1200. Anerror code correction block (ECC) 1224 may be configured to detecterrors of the data read from the multi-bit flash memory 1210.

A central processing unit (CPU) 1222 performs the overall controllingoperation for data exchange of the memory controller 1220. Although notshown, the memory card 1200 according to the present embodiment mayfurther include a read only memory (ROM) storing code data forinterfacing with the host. In one embodiment, the memory card 1200includes one or more semiconductor devices (e.g., chips, packages, etc.)including one or more e-fuses in accordance with the various embodimentsdescribed above.

FIG. 35 is a schematic block diagram illustrating an exemplaryinformation processing system in which semiconductor devices accordingto embodiments of the present invention are mounted.

Referring to FIG. 35, the memory system 1310 according to certainembodiments is mounted on an information processing system, such as amobile device or a desk-top computer. The information processing system1300 according to the certain embodiments includes a modem 1320electrically connected to the memory system 1310 and a system bus 1360,a central processing unit (CPU) 1330, a random access memory (RAM) 1340,and a user interface (I/F) 1350. The memory system 1310 may beconfigured in substantially the same manner as the aforementioned memorysystem. The memory system 1310 stores data processed by the CPU 1330 orexternally input data. The memory system 1310 may be constituted by asolid state drive (SSD). In this case, the information processing system1300 may stably store large-capacity data in the memory system 1310.Along with the increase in the reliability, the memory system 1310 maysave resources required in error correction, thereby providing ahigh-speed data exchange function to the information processing system1300. The memory system 1310 may include one or more semiconductordevices (e.g., chips, packages, etc.) that include one or more e-fusessuch as described in the above embodiments. Although not shown, theinformation processing system 1300 according to the certain embodimentsmay further include an application chipset, a camera image processor(CIS), an I/O device, and so on.

While the present disclosure has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the present invention as defined by the following claims. It istherefore desired that the present embodiments be considered in allrespects as illustrative and not restrictive, reference being made tothe appended claims rather than the foregoing description to indicatethe scope of the invention.

What is claimed is:
 1. An e-fuse structure of a semiconductor device,comprising: a first metal pattern including a first part and a secondpart extending in a first direction and positioned to be near to eachother and a third part near to the second part, and formed at a firstmetal level, the second part being positioned between the first part andthe third part, the first part and the second part being connected toeach other, and the third part electrically being disconnected from thesecond part; a second metal pattern formed at a second metal leveldifferent from the first metal level; a third metal pattern formed at athird metal level between the first metal level and the second metallevel; a first via connecting the first part to the third metal pattern;and a second via connecting the second metal pattern to the third metalpattern.
 2. The e-fuse structure of claim 1, wherein the third metalpattern extends in a second direction different from the firstdirection.
 3. The e-fuse structure of claim 1, wherein the third metalpattern extends in the first direction.
 4. The e-fuse structure of claim1, wherein a distance between the first via and the second via is withina Blech length.
 5. The e-fuse structure of claim 1, wherein the firstmetal pattern includes a fourth part extending in the first directionand facing the second part and the first part is positioned between thesecond part and the fourth part, and wherein the fourth part is not usedas a path of current migration.
 6. The e-fuse structure of claim 1,wherein the first metal pattern includes a first power supply connectionpart connected to the second part, the second metal pattern includes asecond power supply connection part, and wherein a first end of thesecond part is connected to the first part and a second end of thesecond part is connected to the first power supply connection part. 7.The e-fuse structure of claim 1, wherein the second metal patternincludes a fourth part and a fifth part facing each other and positionedto be near to each other and a sixth part connecting one end of thefourth part to one end of the fifth part, and wherein the second viaconnects the third metal pattern to the fourth part.
 8. The e-fusestructure of claim 1, wherein the first metal pattern and the secondmetal pattern are formed on device patterns formed on a substrate,wherein a height from a top surface of the substrate to the first metallevel is greater than a height from the top surface of the substrate tothe second metal level, and wherein the first metal pattern is forreceiving a positive voltage and the second metal pattern is forreceiving a negative voltage.
 9. The e-fuse structure of claim 2,wherein the third metal pattern includes a fourth part extending in thesecond direction and fifth parts formed at opposite sides of the fourthpart to be parallel with the fourth part, and wherein the first via andthe second via are connected to the fourth part.
 10. The e-fusestructure of claim 3, wherein the third metal pattern includes a fourthpart extending in the first direction and fifth parts formed at oppositesides of the fourth part to be parallel with the fourth part, andwherein the first via and the second via are connected to the fourthpart.
 11. The e-fuse structure of claim 6, wherein the e-fuse structureis configured such that when a program current is supplied to the firstpower supply connection part and the second power supply connectionpart, a void is created at the second part.
 12. The e-fuse structure ofclaim 6, wherein the e-fuse structure is configured such that when aprogram current is supplied to the first power supply connection partand the second power supply connection part, the maximum temperature ismeasured in the first via.
 13. The e-fuse structure of claim 7, whereinthe second metal pattern includes a second power supply connection partconnected to the fifth part.
 14. The e-fuse structure of claim 9,wherein the first via and the second via are positioned between thefifth parts.
 15. The e-fuse structure of claim 9, wherein the first viais positioned between the fifth parts and the second via is notpositioned between the fifth parts.
 16. An e-fuse structure of asemiconductor device comprising: a first metal pattern formed on a topsurface of a lower layer; a first via electrically connected to thefirst metal pattern; a second metal pattern formed at a first heightfrom the top surface of the lower layer and electrically connected tothe first via; a second via electrically connected to the second metalpattern; and a third metal pattern formed at a second height greaterthan the first height from the top surface of the lower layer andincluding a first part and a second part extending in a first directionand positioned to be near to each other, the second via being connectedto the first part, and the first part and the second part electricallybeing connected to each other, wherein a width of a portion of the firstmetal pattern connected to the first via is a first width, a width ofthe first via is a second width, a width of the second via is a thirdwidth, a width of the first part is a fourth width, a width of thesecond part is a fifth width, the first width is greater than the secondwidth, the second width is greater than or equal to the third width, thethird width is substantially equal to the fourth width, and the fifthwidth is smaller than the fourth width.
 17. The e-fuse structure ofclaim 16, wherein the e-fuse structure is configured such that when anegative voltage is applied to the first metal pattern and a positivevoltage is applied to the third metal pattern, a void is created in thesecond part.
 18. The e-fuse structure of claim 16, wherein the thirdmetal pattern extends in the first direction and includes a third partfacing the first part with the second part positioned between the thirdpart and the first part.